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Single contact beam induced current phenomenon for microelectronic failure analysis
Affiliation:1. Centre for Integrated Circuit Failure Analysis and Reliability, National University of Singapore, 10 Kent Ridge Crescent, Singapore 11926;2. Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798;3. Texas Instruments, 12203 SW Fwy, M/S 733, Stafford, TX 77477, USA;4. Advanced Micro Devices (Singapore) Pte. Ltd., 508 Chai Chee Lane, Singapore 469032;5. Advanced Micro Devices, 5204 E. Ben White Blvd, Austin, TX 78741, USA;1. Indian Institute of Technology Madras, Chennai, India;2. Federal Institute for Materials Research and Testing (BAM), 12200 Berlin, Germany;1. Department of Mechanics, Mathematics and Management (DMMM), Politecnico di Bari, Viale Japigia 182, 70126 Bari, Italy;2. Enea Research Centre Brindisi, SS 7 Appia, Km 714, 72100 Brindisi, Italy;3. Enea Research Centre Casaccia, Via Anguillarese, 301, 00123 Roma, Italy;1. School of Electronics and Information, Northwestern Polytechnical University, Xi’an 710072, China;2. School of Information Science and Technology, Northwest University, Xi’an 710069, China
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