Diamond growth on Ir/CaF2/Si substrates |
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| Affiliation: | 1. College of Electrical Engineering, Northeast Dianli University, Jilin 132012, China;2. College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071, China;3. College of Chemical Engineering, Northeast Dianli University, Jilin 132012, China;1. V. I. Vernadsky Crimean Federal University, Simferopol, Russia;2. National Research University of Electronic Technology, Zelenograd, Moscow, Russia;1. Fraunhofer Technology Center for Semiconductor Materials THM, Am St. Niclas Schacht 13, 09599 Freiberg, Germany;2. Fraunhofer Institute for Integrated Systems and Device Technology IISB, Schottkystraße 10, 91058, Erlangen, Germany |
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| Abstract: | A new multi-layered structure of heteroepitaxial (1 0 0) and (1 1 1) Ir grown on CaF2-buffered (0 0 1) and (1 1 1) Si wafers by UHV electron-beam evaporation was prepared for the deposition of diamond films. A two-step process of bias-enhanced nucleation and a subsequent growth by controlling the α growth parameter was performed to deposit (0 0 1) and (1 1 1) diamond films by chemical vapor deposition, respectively. Scratching or seeding by fine diamond powders was also attempted on the (1 1 1) substrates to enhance the diamond nucleation density. Raman spectroscopy, X-ray diffraction, scanning electron microscopy and high-resolution transmission electron microscopy were used to characterize the Ir/CaF2/Si substrates as well as the diamond films grown on top of iridium layer. Heteroepitaxial relationship between the deposited diamond grains and (0 0 1) substrates has been observed. |
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