Laser-induced phase transitions in ion-implanted diamond |
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| Affiliation: | 1. General Physics Institute, Vavilova Str. 38, 119991 Moscow, Russia;2. Institute of Applied Physics, University of Bern, Sidlerstrasse 5, Bern CH-3012, Switzerland;3. Institute of Radio Engineering and Electronics, 1 Vvedenskogo Sq., 141190 Fryazino, Russia;4. P.N. Lebedev Physical Institute, Leninsky Avenue 53, 117924 Moscow, Russia;1. Universidade Federal do Espírito Santo, Depto. de Física, Vitória 291075-910, ES, Brazil;2. Instituto Federal do Espírito Santo Campus Piúma, Piúma 29285-000, ES, Brazil;1. Department of Physics, Saurashtra University, Rajkot 360 005, India;2. Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067, India;1. Department of Physics, Faculty of Science, Assiut University, Assiut 71516, Egypt;2. INFN-LNF, Via Enrico Fermi, 40, I-00044, Frascati, Roma, Italy;3. The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihoga-oka, Ibaraki, Osaka 567-0047, Japan |
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| Abstract: | Results are reported on the study of phase transformations in D+ (deuterium) ion-implanted diamond single crystals induced by nanosecond pulses of a KrF excimer laser (λ=248 nm). Multipulse laser irradiation at fluences lower than the graphitization thresholds resulted in progressive annealing, pronounced in an increase of the optical transmission and surface contraction. A non-linear defect distribution in a near-surface layer was found to strongly affect the annealing and graphitization processes; higher annealing efficiency and higher graphitization thresholds were observed under irradiation conditions when a laser beam was incident onto a buried defective layer through diamond, i.e., onto a ‘back’ side of the diamond sample opposite to the ion-implanted side. The influence of non-uniform laser-induced heating of defective diamond material on characteristic features of the phase transitions is discussed. |
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