Initial growth of heteroepitaxial diamond on Ir (0 0 1)/MgO (0 0 1) substrates using antenna-edge-type microwave plasma assisted chemical vapor deposition |
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| Affiliation: | 1. CREST, Japan Science and Technology Corporation (JST), Tokyo, Japan;2. School of Science and Engineering, Waseda University, Ohkubo 3-4-1, Shinjuku-ku, Tokyo 169-8555, Japan;3. Micro Denshi Co., Ltd., 2-8-25 Yoshinodai, Kawagoe-shi, Saitama, Japan;4. FCT Project/JFCC, Tokyo, Japan;1. FEI University Center, São Bernardo do Campo, Brazil;2. ICTEAM/ELEN, Université Catholique de Louvain, Louvain-la-Neuve, Belgium;1. Aix-Marseille Université, CNRS, CINaM UMR 7325, 13288 Marseille, France;2. Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, USA;3. Department of Materials Science and Engineering, Technion—Israel Institute of Technology, Haifa 32000, Israel;1. Università degli Studi di Perugia, Perugia, Italy;2. INFN Perugia, Perugia, Italy;3. Università degli Studi di Firenze, Florence, Italy;4. INFN Firenze, Pisa, Italy;5. LENS Firenze, Florence, Italy;1. The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China;2. School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China;3. School of Electrical Engineering and Automation, Wuhan University, Wuhan 430072, China;4. School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China |
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| Abstract: | Initial growth of heteroepitaxial diamond on Ir (0 0 1)/MgO (0 0 1) was investigated by scanning electron microscopy, reflection high-energy electron diffraction (RHEED) and atomic force microscopy. Bias-enhanced nucleation (BEN) was performed by antenna-edge-type microwave plasma assisted chemical vapor deposition. In BEN, diamond crystallites nucleated and grew along the −1 1 0] and 1 1 0] directions of iridium. Diamond was likely to nucleate on protruded iridium areas. After BEN, in addition to the diamond diffraction spots, iridium bulk diffraction spots, which were not observed before BEN, were observed by RHEED. The iridium surface appeared to be protruded and changed by the high ion current density in BEN. Under 0 0 1] selective growth conditions, diamond crystallites, which were less than 10 nm in diameter, were etched by H2 plasma. Diamond nucleated areas corresponded to the surface ridges of iridium along the −1 1 0] and 1 1 0] directions at 10–40 nm intervals before BEN. |
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