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Pulsed plasma-induced alignment of carbon nanotubes
Affiliation:1. Materials Engineering Center, Università di Perugia, Terni 05100, Italy;2. Dipartimento di Fisica—Unità INFM, Università dell''Aquila, Coppito (AQ) 67010, Italy;1. Institut Charles Gerhardt de Montpellier, CNRS UMR 5253, Université Montpellier, Place Eugène Bataillon, 34095 Montpellier Cedex 5, France;2. Materials, Environment and Energy Laboratory (UR14ES26), Faculty of Science, University of Gafsa, 2112 Gafsa, Tunisia;1. Key Laboratory of Cellulose and Lignocellulosics Chemistry, Guangzhou Institute of Chemistry, Chinese Academy of Sciences, Guangzhou 510650, PR China;2. University of Chinese Academy of Sciences, Beijing 100049, PR China;1. Department of Physics, University of Shahrood, Shahrood 36155-316, Iran;2. Department of Chemistry, University of Shahrood, Shahrood 36155-316, Iran;1. Department of Chemistry and Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, ON, Canada N2L 3G1;2. Bordeaux INP, ICMCB, UPR 9048, 33600 Pessac, France
Abstract:The growth of uniform films of well-aligned carbon nanotubes (CNTs) using pulsed plasma-enhanced chemical vapor deposition is reported here. It is demonstrated that nanotubes can be grown on a certain critical catalyst film thickness and that their alignment is primarily induced by pulsed plasma excitation time. It is, in fact, found that switching the plasma source for 0.1 s effectively turns the alignment mechanism on, leading to a sharp transition between the pulsed plasma-grown straight nanotubes and continuous plasma-grown curly nanotubes. Raman spectroscopy was successfully applied to confirm that, by employing a suitable plasma excitation time, it is possible to obtain the growth of nanotubes with a limited presence of amorphous carbon on the substrate surface. The pulsed biasing technique offers an efficient method to adjust the CNTs' alignment by independent control of the neutral radical and ion fluxes to the surface.
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