Influence of deposition temperature on the growth of vacuum evaporated V2O5 thin films

V₂O₅ films were deposited on silicon (111) substrates by vacuum evaporation technique at various deposition temperatures of 300, 473, 573, 623 and 673 K. X-ray characterization revealed that the films deposited at T_s≤473 K are amorphous and the film deposited at T_s≥573 K is polycrystalline. It is interesting to note that the film deposited at T_s=573 K is strongly oriented with (001) planes parallel to the substrate and the degree of preferred orientation towards (001) planes found to decrease with further increase in the deposition temperature. The influence of deposition temperature on the growth of the V₂O₅ films has been studied by Raman scattering spectroscopy. The films deposited on the silicon substrates maintained at 573 K are found to have better structural quality.