Highly reliable operation of strain-compensated 0.98 μmInGaAs/lnGaP/GaAs lasers with InGaAsP strained barriers for EDFAs |
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| Authors: | Toyonaka T. Sagawa M. Hiramoto K. Shinoda K. Uomi K. Ohishi A. |
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| Affiliation: | Fiberoptics Div., Hitachi Ltd., Tokyo; |
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| Abstract: | Highly reliable operation of 0.98 μm strain-compensated InGaAs/ InGaAsP lasers is demonstrated for the first time with an estimated lifetime of 170 kh at 25°C. Moreover, we reveal that the degradation rates at 90°C and 80 mW output power are four times smaller than those of identical lasers with GaAs barriers |
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