A surface potential based drain current model for asymmetric double gate MOSFETs |
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Authors: | Pradipta Dutta Binit Syamal N Mohankumar CK Sarkar |
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Affiliation: | a School of Technology, Electronics and Tele-Communication Engineering, KIIT University, Bhubaneswar, Orissa 751 024, India;b Department of Electronics and Communication Engineering, Jadavpur University, Kolkata 700 032, India;c SKP Engineering College, Thiruvannamalai 606 611, Tamil Nadu, India |
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Abstract: | In this paper, we present a generic surface potential based current voltage (I-V) model for doped or undoped asymmetric double gate (DG) MOSFET. The model is derived from the 1-D Poisson’s equation with all the charge terms included and the channel potential is solved for the asymmetric operation of DG MOSFET based on the Newton-Raphson iterative method. A noncharge sheet based drain current model based on the Pao-Sah’s double integral method is formulated in terms of front and back gate surface potentials at the source and drain end. The model is able to clearly show the dependence of the front and back surface potential and the drain current on the terminal voltages, gate oxide thicknesses, channel doping concentrations and the Silicon body thickness and a good agreement is observed with the 2-D numerical simulation results. |
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Keywords: | Asymmetric double gate MOSFET Poisson’ s equation Pao-Sah’ s double integral Short-channel effects |
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