| CCD辐射损伤效应及加固技术研究进展 |
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| 引用本文： | 王祖军,唐本奇,肖志刚,黄绍艳,张勇,刘敏波,陈伟,刘以农.CCD辐射损伤效应及加固技术研究进展[J].半导体光电,2009,30(6):797-802,814. |
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| 作者姓名： | 王祖军 唐本奇 肖志刚 黄绍艳 张勇 刘敏波 陈伟 刘以农 |
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| 作者单位： | 清华大学,工程物理系,粒子技术与辐射成像教育部重点实验室,北京,100084;西北核技术研究所,西安,710024;西北核技术研究所,西安,710024;清华大学,工程物理系,粒子技术与辐射成像教育部重点实验室,北京,100084 |
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| 摘 要： | 综述了电荷耦合器件(CCD)在空间环境和核辐射领域中的辐射效应研究进展;阐述了不同粒子辐照CCD的损伤效应机理及暗电流、平带电压和电荷转移效率等敏感参数的退化机制;从制造工艺、器件结构、工作模式等方面介绍了CCD抗辐射加固技术;分析了CCD辐射效应研究的发展趋势。
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| 关 键 词： | 电荷耦合器件 辐射效应 损伤机理 暗电流 电荷转移效率 加固技术 |
Progress of Radiation Damage Effects and Hardening Technology on CCD |
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| WANG Zu-jun,TANG Ben-qi,XIAO Zhi-gang,HUANG Shao-yan,ZHANG Yong,LIU Min-bo,CHEN Wei,LIU Yi-nong.Progress of Radiation Damage Effects and Hardening Technology on CCD[J].Semiconductor Optoelectronics,2009,30(6):797-802,814. |
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| Authors: | WANG Zu-jun TANG Ben-qi XIAO Zhi-gang HUANG Shao-yan ZHANG Yong LIU Min-bo CHEN Wei LIU Yi-nong |
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| Affiliation: | WANG Zu-jun1,2,TANG Ben-qi2,XIAO Zhi-gang2,HUANG Shao-yan2,ZHANG Yong2,LIU Min-bo2,CHEN Wei2,LIU Yi-nong1(1.Key Laboratory of Particle & Radiation Imaging Ministry of Education,Department of Engineering Physics,Tsinghua University,Beijing 100084,CHN,2.Northwest Institute of Nuclear Technology,Xi\'an 710024,CHN) |
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| Abstract: | The progress of radiation damage effects on CCD in space environment and nuclear radiation are reviewed.The damage mechanisms of CCD irradiated by different particles and the degradation of radiation sensitive parameters,such as dark current,flatband voltage and CTE,are presented.The radiation hardening technologies are introduced from the aspects of manufacture technology,device structures and operation modes.Developing directions and prospects of radiation effects on CCD are analyzed. |
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| Keywords: | CCD radiation effects damage mechanism dark current charge transfer efficiency hardening technology |
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