| 硒化温度对CIGS/Mo界面微观结构和化学成分的影响 |
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| 引用本文： | 袁琦,茶丽梅,明文全,杨修波,李石勇,韩俊峰. 硒化温度对CIGS/Mo界面微观结构和化学成分的影响[J]. 材料导报, 2018, 32(11): 1787-1790, 1819. DOI: 10.11896/j.issn.1005-023X.2018.11.003 |
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| 作者姓名： | 袁琦 茶丽梅 明文全 杨修波 李石勇 韩俊峰 |
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| 作者单位： | 湖南大学材料科学与工程学院,湖南,410082北京理工大学物理学院,北京,100081 |
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| 基金项目： | 国家自然科学基金(51402103)，湖南省自然科学基金(2015JJ3040)，湖南省喷射沉积技术及应用重点实验室年度重点项目 |
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| 摘 要： | 采用磁控溅射和硒化热处理的方法在钠钙玻璃上沉积了一系列铜铟镓硒(CIGS)薄膜。利用X射线衍射(XRD)、高分辨透射电子显微术(HR-TEM)、高角环形暗场相(HAADF)和X射线能量散射光谱(EDS)元素面扫描分析等表征手段,研究了铜铟镓硒/钼(CIGS/Mo)界面特性随硒化温度的变化规律。结果表明,400℃硒化的薄膜中CIGS与Mo层之间界面清晰;当硒化温度为500℃时,CIGS/Mo界面上出现MoSe_2薄层和富Na的二次相纳米颗粒;当硒化温度升至600℃时,MoSe_2层增厚,同时富Na二次相纳米颗粒连接形成不平整的条带,CIGS/Mo界面演变为CIGS/富Na的二次相/MoSe_2/Mo多层结构。此外,MoSe_2的取向对富Na二次相的形成有一定的影响。
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| 关 键 词： | CuInxGa1－xSe2 薄膜 界面 微观结构 成分 CuInxGa1－xSe2 film interface microstructure composition |
Influences of the Selenization Temperature on the Microstructures and Chemical Compositions of CIGS/Mo Interface |
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| YUAN Qi,CHA Limei,MING Wenquan,YANG Xiubo,LI Shiyong and HAN Junfeng. Influences of the Selenization Temperature on the Microstructures and Chemical Compositions of CIGS/Mo Interface[J]. Materials Review, 2018, 32(11): 1787-1790, 1819. DOI: 10.11896/j.issn.1005-023X.2018.11.003 |
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| Authors: | YUAN Qi CHA Limei MING Wenquan YANG Xiubo LI Shiyong HAN Junfeng |
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| Affiliation: | College of Materials Science and Engineering, Hunan University, Changsha 410082,College of Materials Science and Engineering, Hunan University, Changsha 410082,College of Materials Science and Engineering, Hunan University, Changsha 410082,College of Materials Science and Engineering, Hunan University, Changsha 410082,College of Materials Science and Engineering, Hunan University, Changsha 410082 and Department of Physics,Beijing Institute of Technology,Beijing 100081 |
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| Abstract: | CuInxGa1-xSe2(CIGS)films were deposited on soda-lime glass by magnetron sputtering and selenization heat treat-ments.X-ray diffraction (XRD),high resolution transmission microscopy (HR-TEM),high-angle annular dark field (HAADF) image and X-ray energy dispersive spectrum (EDS)mapping were utilized to analyze the influence of selenization temperature on the characters of CIGS/Mo interface.It was found that CIGS/Mo interface was clear when the selenization temperature was 400 ℃.A MoSe2 thin layer and Na-riched second phase nanoparticles were detected at CIGS/Mo interface at 500 ℃.The MoSe2 layer became thicker and the Na-riched nanoparticles grew into a curved band at 600 ℃,therefore the CIGS/Mo interface developed into a multi-layered structure of CIGS/Na-riched second phase/MoSe2/Mo.In addition,the orientations of MoSe2 grains may effect on the forma-tion of second phases. |
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