薄规格取向硅钢二次再结晶过程中Goss织构演变的Monte Carlo模拟

通过EBSD实验获取了薄规格取向硅钢(0.18 mm厚)初次再结晶样品表面晶粒组织的取向数据,并以此构建模拟的初始组织.采用Potts模型Monte Carlo方法对薄规格取向硅钢初次再结晶样品的二次再结晶过程进行了模拟仿真,研究了表面能对Goss织构演变的影响.模拟结果表明:Goss取向晶粒与相邻晶粒的表面能差是Goss取向晶粒异常长大的重要驱动力;表面能差存在一个临界值(约12％),只有当表面能差大于此临界值时才会发生表面能驱动Goss取向晶粒的异常长大.

Monte Carlo Simulation of the Evolution of Goss Texture in Secondary Recrystallization of Thin Gauge Grain Oriented Silicon Steel

The orientation data of surface grains of the primary recrystallized samples of thin gauge grain oriented silicon steel (0.18 mm thick) were obtained by EBSD experiment and the initial microstructure were generated from the orientation data.The Potts model Monte Carlo method was used to simulate the secondary recrystallization of thin gauge graded grain oriented silicon steel,and the effect of surface energy on the evolution of Goss texture was studied.The simulation results show that the surface energy difference between Goss grain and its adjacent grains is an important driving force for Goss grain growth.The surface energy difference has a critical value (≈12％),only when the surface energy difference is larger than the critical value,can the surface energydriven abnormal Goss grain growth occur.