High efficiency AlxGa1−xAs/GaAs solar cells: Fabrication, irradiation and annealing effect |
| |
Authors: | B. Li X. B. Xiang Z. P. You Y. Xu X. Y. Fei X. B. Liao |
| |
Abstract: | High efficiency AlxGa1−xAs/GaAs heteroface solar cells have been fabricated by an improved multi-wafer squeezing graphite boat liquid phase epitaxy (LPE) technique, which enables simultaneous growth of twenty 2.3 × 2.3cm2 epilayers in one run. A total area conversion efficiency of 17.33% is exhibited (1sun, AMO, 2.0 × 2.0cm2). The shallow junction cell shows more resistance to 1 MeV electron radiation than the deep one. After isochronal or isothermal annealing the density and the number of deep level traps induced by irradiation are reduced effectively for the solar cells with deep junction and bombardment under high electron fluences. |
| |
Keywords: | GaAs Solar cell Liquid phase epitaxy Irradiation Annealing |
本文献已被 ScienceDirect 等数据库收录! |