Characterization of near-surface electrical properties of multi-crystalline silicon wafers |
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Authors: | P. Drummond A. Kshirsagar J. Ruzyllo |
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Affiliation: | a Department of Electrical Engineering and Department of Materials Science and Engineering, Penn State University, University Park, PA 16802, United States |
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Abstract: | This experiment is concerned with photoconductive decay (PCD) measurements devised specifically for the purpose of characterization of the near-surface region of semiconductor substrates. Specifically, the method is utilized to evaluate the effects of crystallographic orientation, grain boundaries, and surface texturing on the near-surface electrical properties of multi-crystalline silicon (mc-Si) wafers used for solar cell applications. The PCD method is also explored for the purposes of monitoring processes used in the manufacture of mc-Si solar cells. The effect of saw damage and damage removal by wet etching on the near-surface lifetime of minority carriers and carrier mobility in mc-Si wafers is quantitatively determined. The results obtained demonstrate a direct correlation between condition of the mc-Si surface and the electrical parameters measured. It is postulated that the PCD method using temporary contact can be effectively used to monitor the condition of mc-Si surfaces during solar cell manufacturing. |
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Keywords: | Near-surface electrical properties Electrical characterization PCD Multi-crystalline silicon |
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