非晶硅光电导层交流电阻率的研究

利用等效电路，估算出高性能液晶光阀对非晶硅光电导层交流电阻率的要求。用化学气相沉积法在最佳工艺条件下制备了非晶硅薄膜，测量了样品的交流电阻率。结果表明，非晶硅薄膜的交流电阻率随照射光的波长增大而先减小后增大，随功率密度、衬底温度和射频功率的增大而减小。样品的交流电阻率满足高性能液晶光阀光电导层的要求。

Study of AC Resistively of Hydrogenated Amorphous Silicon Photoconductive Layers

The requirements of high characteristic liquid crystal light valve on AC resistively of amorphous silicon (a-Si) photoconductive layers is discussed by equal circuit. The a-Si films is deposited by plasma enhanced chemical vapor deposition technique with the optimum technology. The AC resistively of sample is measured. The results show that as light wavelength increases, AC resistively of a-Si films first decreases, then increases, and decreases as power, temperature of bed plate, and rf-power increases. The AC resistively of sample meets the technical requirements of high characteristic liquid crystal light valve.