Interactions of dislocations and antiphase (inversion) domain boundaries in III–V/IV heteroepitaxy |
| |
Authors: | Eric P Kvam |
| |
Affiliation: | (1) School of Materials Engineering, Purdue University, 47907-1289 West Lafayette, IN |
| |
Abstract: | The potential for interactions of misfit strain relieving dislocations with inversion-type antiphase domain boundaries is
considered for III–V on group IV growth. The specific cases of GaAs grown on Si (001) and vicinal (001) substrates are examined.
It is shown that threading dislocation densities for these growths should be unacceptably high due to obstruction of threading
dislocation motion by the antiphase domain boundaries, even when the boundaries are eliminated shortly after the inception
of GaAs layer growth. Cutting of the antiphase domain boundaries by mobile dislocations would require creation of new highenergy
surface area. It is suggested that more successful routes would be growth of a strain-relieving buffer or growth on a {hhk}
surface. |
| |
Keywords: | Antiphase-domain boundary dislocations GaAs/Si heteroepitaxy |
本文献已被 SpringerLink 等数据库收录! |