Flicker noise in gate overlapped polycrystalline silicon thin-filmtransistors |
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| Authors: | Rahal M. Lee M. Burdett A.P. |
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| Affiliation: | Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London; |
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| Abstract: | A study of the noise performance of gate overlapped polycrystalline silicon thin-film transistors (TFTs) is presented. Low-frequency noise measurements were carried out on n- and p-type samples fabricated by excimer laser crystallization. It is shown that the carrier number fluctuation model applies not only to n-type but also to p-type devices. The density of oxide traps was extracted from the noise measurements and was of the order of 1018-1019 eV-1 cm-3 |
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