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A high-performance enhancement-mode AIGaN/GaN HEMT |
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| Authors: | Feng Zhihong Xie Shengyin Zhou Rui Yin Jiayun Zhou Wei Cai Shujun |
| Affiliation: | Feng Zhihong Xie Shengyin Zhou Rui Yin Jiayun Zhou Wei Cai Shujun (1 National Key Laboratory of Application Specific Integrated Circuit,Shijiazhuang 050051,China) (2 State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China) |
| Abstract: | |
| Keywords: | enhancement-mode AlGaN/GaN HEMT fluorine plasma threshold voltage numerical simulation |
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