Li Jin Liu Hongxia Li Bin Cao Lei Yuan Bo (Key Laboratory of Ministry of Education for Wide Bandgap Semiconductor Devices,School of Microelectronics,Xidian University,Xi'an 710071,China)
Abstract:
For the first time,a simple and accurate two-dimensional analytical model for the surface potential variation along the channel in fully depleted dual-material gate strained-Si-on-insulator(DMG SSOI) MOSFETs is developed.We investigate the improved short channel effect(SCE),hot carrier effect(HCE),drain-induced barrier-lowering(DIBL) and carrier transport efficiency for the novel structure MOSFET.The analytical model takes into account the effects of different metal gate lengths,work functions,the drain bia...