Demonstration of a 77-GHz heterojunction bipolar transferredelectron device |
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| Authors: | Twynam JK Yagura M Takahashi N Suematsu E Sato H |
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| Affiliation: | Adv. Technol. Res., Sharp Corp., Nara; |
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| Abstract: | We demonstrate for the first time a heterojunction bipolar transferred electron device (HBTED), a device with a bipolar transistor-like structure in which Gunn oscillations occur. The use of a graded doping profile in the collector region is, we believe, a key factor in the device design. AlGaAs/GaAs HBTEDs fabricated on semi-insulating GaAs substrates exhibit free-running oscillations at a frequency of around 77 GHz. The third (emitter) terminal enables this device to be injection-locked and to function as a self-oscillating mixer |
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