| 非均匀掺杂衬底MOS结构少子产生寿命的测量 |
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| 引用本文： | 黄庆安,史保华,顾英,张德胜. 非均匀掺杂衬底MOS结构少子产生寿命的测量[J]. 半导体学报, 1989, 10(7): 538-541 |
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| 作者姓名： | 黄庆安 史保华 顾英 张德胜 |
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| 作者单位： | 西北电讯工程学院微电子研究所，西北电讯工程学院微电子研究所，西北电讯工程学院微电子研究所，西北电讯工程学院微电子研究所 西安 南京工学院微电子中心博士生，西安，西安，西安 |
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| 摘 要： | 本文分析了非均匀掺杂衬底MOS电容对线性扫描电压的瞬态响应,提出了三角波C-V技术测量非均匀掺杂MOs电容少子产生寿命的方法.该方法简单、且不需知道衬底的掺杂分布.
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| 关 键 词： | 衬底 掺杂 MOS电容 少子 产生寿命 |
Measurements of Minority Generation Lifetime of MOS Structures with Nonuniformly Doped Substrate |
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| Huang Qingan/Microelectronics Research Institute,Northwest Telecommunication Engineering Institute. XianShi Baohua/Microelectronics Research Institute,Northwest Telecommunication Engineering Institute. XianGu Ying/Microelectronics Research Institute,Northwest Telecommunication Engineering Institute. XianZhang Desheng/Microelectronics Research Institute,Northwest Telecommunication Engineering Institute. Xian. Measurements of Minority Generation Lifetime of MOS Structures with Nonuniformly Doped Substrate[J]. Chinese Journal of Semiconductors, 1989, 10(7): 538-541 |
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| Authors: | Huang Qingan/Microelectronics Research Institute Northwest Telecommunication Engineering Institute. XianShi Baohua/Microelectronics Research Institute Northwest Telecommunication Engineering Institute. XianGu Ying/Microelectronics Research Institute Northwest Telecommunication Engineering Institute. XianZhang Desheng/Microelectronics Research Institute Northwest Telecommunication Engineering Institute. Xian |
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| Abstract: | Transient response of non-uniformly doped MUS capacitors to a linear voltage ramp isanalysed. A triangular voltage sweep C-V technique is presented thus obtaining a method tomeasure the minority generation lifetime for non-uniformly doped MOS capacitors.The te-chnique is simple and can be used without knowing the doping profile of MOS substrate. |
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| Keywords: | Nonuiformly doped MOS capacitors Minority carriers Generation lifetime |
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