IaAsP/InGaAsP quantum-well 1.3 μm vertical-cavity surface-emitting lasers |
| |
| Authors: | Lao Y.-F. Cao C.-F. Wu H.-Z. Cao M. Gong Q. |
| |
| Affiliation: | Chinese Academy of Sciences, Shanghai, People's Republic of China; |
| |
| Abstract: | 1.3 μm vertical-cavity surface-emitting lasers based on a novel gain media consisting of InAsP/InGaAsP strain-compensated multiple quantum wells are reported. SiO2/TiO2/ dielectric thin-film pairs and wafer-bonded GaAs/Al(Ga)As distributed Bragg reflectors are used as the top and bottom cavity mirrors, respectively. The device with a 5 μm-diameter selectively etched tunnel-junction aperture exhibits submilliampere threshold current as low as 0.54 mA and single-transverse mode emission. Maximum output optical power of 1.9 mW was observed in multimode lasing devices. |
| |
| Keywords: | |
|
|
