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Structure and optical properties of ZnS/SiO2 nanocables
Authors:Yong Su  Qingtao Zhou  Mi Gao  Yiqing Chen  Yi Feng
Affiliation:School of materials science and engineering, Hefei University of Technology, Hefei, Anhui, 230009, PR China
Abstract:The nanocables with a single crystal ZnS core and a thin amorphous SiO2 shell were successfully synthesized by a simple thermal evaporation method with the mechanism of Vapor-Solid growth. Its morphology and microstructure were determined by field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) and photoluminescence spectroscopy (PL). The ZnS/SiO2 nanocables have diameters in the range of 20 nm-250 nm, lengths of several tens of micrometers. The core of the nanocable has a cubic sphalerite structure with the coexistence of periodically alternating twins along the [111] growth direction and stacking fault. The nanocables show strong room-temperature photoluminescence with four emission bands centering at 548 nm, 614 nm, 649 nm and 670 nm that may originate to the impurity of ZnS, existence of Si and oxide-related defects.
Keywords:Nanostructure   Growth from vapor   Physical vapor deposition processes   Semiconductors   Luminescence
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