中频反应溅射TiO2时的Ti靶特性

中频反应溅射沉积二氧化钛膜难于控制的主要原因是钛靶的强金属性，使滞回曲线（hysterrisis curve）过渡区临界．实验结果表明，钛靶电压随氧气流量在非平行的过渡区作非单调的变化。建立在化学吸附模型基础上的模拟结果与实测的滞回曲线基本吻合，并可预期功率对靶电压及过渡区位置的影响。模拟进一步考虑到离子注入的影响，计算结果表明，金属态靶电位的波动是由于反应气体离子的注入和反应气体分子化学吸附之间的相互竞争，从而解释了靶电压在过渡态之间出现升高的实验现象。

Simulation of Ti Target Characteristics in TiO2 Film Growth by Medium Frequency Reactive Magnetron Sputtering

Characteristics of the titanium target,in TiO_2 film growth by medium frequency reactive magnetron sputtering,was simulated on the basis of chemisorption and ion implantation.The simulated hysteresis curve-target potential vs.oxyen flow rate-agrees fairly well with the experimental results.In addition,the influence of the sputtering power on the potential and position of the critical transition region in the curve can be predicted with the simulation.We concluded that the two competing factors:implantation of reacitive ions and chemisorption of the reactive gas molecules,strongly affect the potential fluctuation in the metallic region of Ti target and account for the initial potential rise prior to the transition.