How to reduce the Al-texture in AlN films during film preparation |
| |
| Authors: | Yin Ju-qian Chen Xi-ming Yang Bao-he Zhang Qian and Wu Xiao-guo |
| |
| Affiliation: | Tianjin Key Laboratory of Film Electronic and Communication Device, School of Electronics Information Engineering,
Tianjin University of Technology, Tianjin 300384, China;Tianjin Key Laboratory of Film Electronic and Communication Device, School of Electronics Information Engineering,
Tianjin University of Technology, Tianjin 300384, China;Tianjin Key Laboratory of Film Electronic and Communication Device, School of Electronics Information Engineering,
Tianjin University of Technology, Tianjin 300384, China;Tianjin Key Laboratory of Film Electronic and Communication Device, School of Electronics Information Engineering,
Tianjin University of Technology, Tianjin 300384, China;Tianjin Key Laboratory of Film Electronic and Communication Device, School of Electronics Information Engineering,
Tianjin University of Technology, Tianjin 300384, China |
| |
| Abstract: | The preparation of aluminum nitrogen (AlN) film without Al texture is of great significance for the manufacture of high-performance surface acoustic wave (SAW) device. We research the process factors which bring Al into AlN film due to radio frequency (RF) magnetron sputtering system, and discuss how the process parameters influence the AlN thin film containing Al. In the research, it is found that the high sputtering power, the low deposition pressures and low partial pressure of Ar can lead to growing Al-texture during AlN thin film preparation, and the experiment also shows that filling the chamber with nitrogen gas can recrystallize a small amount of Al composition into AlN film during the annealing process in the high temperature environment. |
| |
| Keywords: | |
| 本文献已被 CNKI SpringerLink 等数据库收录！ |
| 点击此处可从《光电子快报》浏览原始摘要信息 |
|
点击此处可从《光电子快报》下载全文 |
|
