Wing tilt investigations on GaN epilayer grown on maskless grooved sapphire by MOCVD |
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Authors: | Nai Sen Yu Xue Liang Zhu Ming Zeng Peng Jun Ming Zhou |
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Affiliation: | (1) Institute of Optoelectronic Technology, School of Mathematics and Physics, Dalian Nationalities University, 116600 Dalian, China;(2) Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing, China |
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Abstract: | GaN epilayer is grown on maskless periodically grooved sapphire by metal organic chemical vapor deposition (MOCVD) in this article. Wing tilt is detected by high resolution X-ray rocking curve. Inhomogeneous deformations between the wing and mesa regions are found by atomic force microscopy (AFM) characterization. The stress distribution is investigated using finite-element simulations. Inhomogeneous stress distribution in the mesa and wing regions is shown, which is also confirmed by micro-Raman spectroscopy. The results show that the wing tilt in GaN layers grown on maskless periodically grooved sapphire mainly originates from the different deformations for mesa and wing region caused by inhomogeneous stress distribution. |
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