| 利用三氯氢硅(TCS)作为硅源在4H-SiC上外延生长的研究 |
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| 引用本文： | 纪刚,孙国胜,刘兴,王雷,赵万顺,曾一平,李晋闽. 利用三氯氢硅(TCS)作为硅源在4H-SiC上外延生长的研究[J]. 半导体学报, 2009, 30(9): 093006-5 |
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| 作者姓名： | 纪刚 孙国胜 刘兴 王雷 赵万顺 曾一平 李晋闽 |
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| 作者单位： | Key Laboratory of Semiconductor Materials Science;Institute of Semiconductors;Chinese Academy of Sciences; |
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| 基金项目： | 国家重点基础研究发展计划;国家自然科学基金 |
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| 摘 要： | Epitaxial growth on n-type 4H-SiC 8° off-oriented substrates with a size of 10 × 10 mm^2 at different temperatures with various gas flow rates has been performed in a horizontal hot wall CVD reactor, using trichlorosilane （TCS） as a silicon precursor source together with ethylene as a carbon precursor source. The growth rate reached 23 μm/h and the optimal epilayer was obtained at 1600℃ with a TCS flow rate of 12 sccm in C/Si of 0.42, which has a good surface morphology with a low RMS of 0.64 nm in an area of 10 x 10 pm2. The homoepitaxial layer was obtained at 1500℃ with low growth rate （〈 5 μm/h） and the 3C-SiC epilayers were obtained at 1650 ℃ with a growth rate of 60-70 μm/h. It is estimated that the structural properties of the epilayers have a relationship with the growth temperature and growth rate. Silicon droplets with different sizes are observed on the surface of the homoepitaxial layer in a low C/Si ratio of 0.32.
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| 关 键 词： | 服务公司 碳化硅 硅体 小时 咨询 塔 化学气相沉积 气体流量 |
| 修稿时间： | 2009-04-14 |
Epitaxial growth on 4H-SiC by TCS as a silicon precursor |
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| Ji Gang,Sun Guosheng,Liu Xingfang,Wang Lei,Zhao Wanshun,Zeng Yiping and Li Jinmin. Epitaxial growth on 4H-SiC by TCS as a silicon precursor[J]. Chinese Journal of Semiconductors, 2009, 30(9): 093006-5 |
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| Authors: | Ji Gang Sun Guosheng Liu Xingfang Wang Lei Zhao Wanshun Zeng Yiping Li Jinmin |
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| Affiliation: | Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | 4H-SiC TCS epitaxial growth growth rate |
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| Keywords: | 4H-SiC TCS epitaxial growth growth rate |
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