| 单晶硅内氢杂质特性研究进展 |
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| 引用本文： | 李传波,李怀祥,刁兆玉. 单晶硅内氢杂质特性研究进展[J]. 稀有金属, 2001, 25(6): 452-458 |
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| 作者姓名： | 李传波 李怀祥 刁兆玉 |
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| 作者单位： | 1. 山东师范大学半导体研究所
2. 山东师范大学化学系 |
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| 基金项目： | 国家自然科学基金资助项目(No.69971014) |
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| 摘 要： | 从单晶硅内氢杂质的引入，氢钝化施主，钝化受主，钝化缺陷等几方面对近年来单晶硅内氢杂质的特性研究进行了综述，强调了氢加速氧扩散、加速热施主与氧沉淀的形成等性质，讨论了氢在单晶硅内的存在状态及硅片在氢气氛中的退火特性。
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| 关 键 词： | 单晶硅 氢 氢退火 红外光谱 |
| 文章编号： | 0258-7076(2001)06-0452-07 |
| 修稿时间： | 2001-02-07 |
Progress of research on hydrogen impurity in single crystalline silicon |
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| Li Chuanbo,Li Huaixiang and Diao Zhaoyu. Progress of research on hydrogen impurity in single crystalline silicon[J]. Chinese Journal of Rare Metals, 2001, 25(6): 452-458 |
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| Authors: | Li Chuanbo Li Huaixiang Diao Zhaoyu |
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| Affiliation: | Li Chuanbo1,Li Huaixiang1 and Diao Zhaoyu2 |
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| Abstract: | Recent studies on hydrogen impurity in single crysta lline silicon were reviewed with focus on the introduction of hydrogen, on the p assivation donors, acceptors and defects. It was emphasized that the promotion of hydrogen to the oxygen dif fusion, to the thermal donor formation and to the oxygen precipitation. The stat es of hydrogen in silicon and the behavior of hydrogen annealed silicon wafers w ere also discussed. |
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| Keywords: | Single crystalline Hydrogen Hydrogen annealing Infrared spectrum Defect |
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