Microstructure and properties of multilayer-derived tungsten silicide |
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| Authors: | Bi-Shiou Chiou H L Rau P H Chang J G Duh |
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| Affiliation: | (1) Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.;(2) Central Research Laboratory, Texas Instruments, 75265 Dallas, Tx.;(3) Department of Materials Science and Engineering, National Tsing Huo University, Hsinchu, Taiwan, R.O.C. |
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| Abstract: | In metallization, peeling and oxidation of tungsten silicide are the most serious problems of tungsten rich silicide. In this
study, multilayer-derived silicon rich tungsten silicide with the silicon film on the outermost surface is investigated to
avoid these problems. The dependence of sheet resistance on the annealing conditions is studied. X-ray diffraction results
indicate that silicide formation is nearly completed after 30 min annealing at 750° C. Microstructures of silicide and polycides
are investigated by electron microscopy. Silicide deposited on SiO2 has smaller grains that deposited on poly-Si. A resistivity of 60 μΩ-cm is obtained for multilayer-derived WSi2.3. |
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| Keywords: | Tungsten silicide metallization microstructure |
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