混合型LIGBT／LDMOS晶体管瞬态响应的电荷控制模型

本文提出一种新型横向绝缘栅双极晶体管／横向扩散ＭＯＳ混合晶体管（ＬＩＧＢＴ／ＬＤＭＯＳ），在有非平衡电子抽出下截止瞬态响应的电荷控制模型。由考虑非准静态效应的积分式连续性方程，导出双载流子动态电荷控制表示式；计及其中双极晶体管宽漂移区的电导调制效应和瞬态电荷分布效应，利用保角变换求得抽出区导通电阻，从而获得归一化瞬态截止电流和瞬态截止时间及它们与漂移区长度的材料参数，特别是与两器件宽度经的关系，据

Charge-Based Model of Turn-off Transient Characteristics of Hybrid LIGBT/LDMOS Transistor

An analytical model tailored for analyzing the fast turn-off transient characteristics of LIGBT/LDMOS,accounting for the transient charge-distribution in the wide quasi-neutral base (QNB) of the pnp bipolar-junction transistor (BJT) and the back-injection effect. is proposed in the paper. The charge-control equation including the extraction of the excess carrier out of the QNB of the pnp BJT by the LDMOS transistor is solved and the normalized turn-off transient current is then obtained. The results give the relationships of the turn-off time from the analytical modeling with the device parameters of LIGBT/LDMOS,e.g. the ratio of width between p+ of LIGBT and n+ of LDMOS, high-injection carrier lifetime, back-injection current density and width of drift region. The modeling methodology is also applicable to the mixed CIGBT (Complementary IGBT) and others.