| 集成电路片内铜互连技术的发展 |
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| 引用本文： | 陈智涛,李瑞伟. 集成电路片内铜互连技术的发展[J]. 微电子学, 2001, 31(4): 239-241 |
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| 作者姓名： | 陈智涛 李瑞伟 |
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| 作者单位： | 清华大学微电子学研究所, |
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| 摘 要： | 论述了铜互连取代铝互连的主要考虑，介绍了铜及其合金的淀积、铜图形化方法、以及铜与低介电常数材料的集成等。综述了ULSI片内铜互连技术的发展现状。
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| 关 键 词： | 集成电路 铜互连 铜淀积 铜图形化 |
| 文章编号： | 1004-3365(2001)04-0239-03 |
| 修稿时间： | 2000-10-30 |
State-of-the-Art of the On-Chip Copper Interconnect Technology for ULSI's |
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| CHEN Zhi tao,LI Rui wei. State-of-the-Art of the On-Chip Copper Interconnect Technology for ULSI's[J]. Microelectronics, 2001, 31(4): 239-241 |
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| Authors: | CHEN Zhi tao LI Rui wei |
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| Abstract: | The reason for replacement of Al interconnect with its Cu counterpart is elaborated.The deposition of copper and its alloys, copper patterning, and the integration of low k material into Cu interconnect are described.The state of the art of the on chip Cu interconnect for ULSI's and its development are summarized in this paper. |
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| Keywords: | Integrated circuit Copper interconnect Copper deposition Copper patterning ULSI |
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