High-frequency submicrometerAl0.48In0.52As/In0.53Ga0.47As heterostructure bipolar transistors |
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| Authors: | Jalali B. Nottenburg R.N. Chen Y.-K. Sivco D. Humphrey D.A. Cho A.Y. |
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| Affiliation: | AT&T Bell Lab., Murray Hill, NJ; |
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| Abstract: | The high speed scaling of an Al0.48In0.52As/In0.53Ga0.47 As submicrometer heterostructure bipolar transistor (HBT) is presented. Transistors with emitter dimensions of 0.5×11 and 3.5×3.5 μm2 exhibit unity current-gain cutoff frequencies of 63 and 70 GHz, respectively. Emitter current density greater than 3.3×105 A/cm2 is demonstrated in a submicrometer AlInAs/InGaAs HBT. The analysis shows that the device speed is limited by the parasitic collector charging time |
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