| 声电输运器件的表面波特性分析 |
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| 引用本文： | 邹英寅 凌明芳. 声电输运器件的表面波特性分析[J]. 浙江大学学报(工学版), 1992, 26(3): 262-268 |
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| 作者姓名： | 邹英寅 凌明芳 |
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| 作者单位： | 浙江大学信息与电子工程系(邹英寅，凌明芳)，浙江大学信息与电子工程系(陈抗生) |
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| 基金项目： | 国家自然科学基金与机电部基础技术研究基金 |
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| 摘 要： | 本文讨论了埋沟砷化镓声电输运器件中声表面波传播特性,金属栅阵列的散射特性和导电理层对表面波的屏蔽特性。比较了不同沟道结构中表面波电位分布及不同金属结构对表面波的散射。指出了为获得性能优良的声电输运器所需结构参数的选择。
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| 关 键 词： | 声表面波 半导体器件 声电输运器件 |
The analysis of surface acoustic wave properties in acoustic charge transport devices |
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| Zou Yingyin Lin Mingfang Chen Kangsheng. The analysis of surface acoustic wave properties in acoustic charge transport devices[J]. Journal of Zhejiang University(Engineering Science), 1992, 26(3): 262-268 |
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| Authors: | Zou Yingyin Lin Mingfang Chen Kangsheng |
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| Affiliation: | Dept. of Information and Electronics Engnieering |
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| Abstract: | This paper discussed the propagation characterstics of surface acoustic wave, the screening of buried conductive layer and the reflection of metal matrix in gallium arsenide acoustic charge transport (ACT) devices. The comparation of wave potential distributions in different chennal structures and wave reflection propeties of different metal matrix is given. It is predicted that proper selection of structure parameters may obtain well operated ACT devices. |
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| Keywords: | surface acoustic wave semicondutor devices charge couple devices |
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