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Improvement of the electrical performance of near UV GaN-based light-emitting diodes using Ni nanodots |
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| Authors: | June-O Song Hun Kang IT Ferguson Sung-Pyo Jung HP Lee Hyun-Gi Hong Takhee Lee Tae-Yeon Seong |
| Affiliation: | aSchool of Electric and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 0250, USA;bDepartment of Electrical Engineering and Computer Science, University of California at Irvine, Irvine, CA 92697, USA;cDepartment of Materials Science and Engineering, Gwangju Institute of Science and Technology, 1, Oryong-dong Puk-gu, Gwangju 500 712, Republic of Korea |
| Abstract: | We report on the improvement of the electrical characteristics of GaN-based light-emitting diodes (LEDs) fabricated with Ag (1 nm)/indium tin oxide (ITO) (250 nm) p-type contacts by using Ni nanodots. As-deposited Ag/ITO contacts with and without the Ni nanodots give non-linear electrical behaviour. However, annealing the samples at 530–630 °C for 1 min in air results in ohmic behaviour. The reverse leakage current characteristics of near UV LEDs are much improved when the Ni nanodots are used. The output power (at 20 mA) of LEDs fabricated with the Ni nanodots is enhanced by a factor of 1.34 as compared with that of LEDs made without the Ni nanodots. |
| Keywords: | PACS: 72 80 Ey 73 40 Cg 73 20 At 79 60 Bm |
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