Antimonide-based compound semiconductors for electronic devices: A review |
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Authors: | Brian R. Bennett Richard Magno J. Brad Boos Walter Kruppa Mario G. Ancona |
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Affiliation: | Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375-5347, USA |
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Abstract: | Several research groups have been actively pursuing antimonide-based electronic devices in recent years. The advantage of narrow-bandgap Sb-based devices over conventional GaAs- or InP-based devices is the attainment of high-frequency operation with much lower power consumption. This paper will review the progress on three antimonide-based electronic devices: high electron mobility transistors (HEMTs), resonant tunneling diodes (RTDs), and heterojunction bipolar transistors (HBTs). Progress on the HEMT includes the demonstration of Ka- and W-band low-noise amplifier circuits that operate at less than one-third the power of similar InP-based circuits. The RTDs exhibit excellent figures of merit but, like their InP- and GaAs-based counterparts, are waiting for a viable commercial application. Several approaches are being investigated for HBTs, with circuits reported using InAs and InGaAs bases. |
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Keywords: | Antimonide HEMT RTD HBT MBE InAs |
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