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Investigation of Au/Ti/Al ohmic contact to N-type 4H–SiC |
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| Authors: | Shu-Cheng Chang Shui-Jinn Wang Kai-Ming Uang Bor-Wen Liou |
| Affiliation: | aInstitute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1, Dashiue Road, Dung Chiu, Tainan, Taiwan, ROC;bDepartment of Electronic Engineering, Wu-Feng Institute of Technology, Chia-yi, Taiwan, ROC;cDepartment of Computer Science and Information Engineering, Wu-Feng Institute of Technology, Chia-yi, Taiwan, ROC |
| Abstract: | In this study, investigation on Au/Ti/Al ohmic contact to n-type 4H–SiC and its thermal stability are reported. Specific contact resistances (SCRs) in the range of 10−4–10−6 Ω cm2, and the best SCR as low as 2.8 × 10−6 Ω cm2 has been generally achieved after rapid thermal annealing in Ar for 5 min at 800 °C and above. About 1–2 order(s) of magnitude improvement in SCR as compared to those Al/Ti series ohmic systems in n-SiC reported in literature is obtained. XRD analysis shows that the low resistance contact would be attributed to the formation of titanium silicides (TiSi2 and TiSi) and Ti3SiC2 at the metal/n-SiC interface after thermal annealing. The Au/Ti/Al ohmic contact is thermally stable during thermal aging treatment in Ar at temperature in the 100–500 °C range for 20 h. |
| Keywords: | Ohmic contact Silicon carbide Specific contact resistance Thermal stability |
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