Trimming CMOS smart imager with tunnel-effect nonvolatile analogue memory |
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| Authors: | Devos F. Zhang M. Ni Y. Pone J.-F. |
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| Affiliation: | Inst. d'Electron. Fondamentale, Univ. Paris Sud., Orsay, France; |
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| Abstract: | Amplified MOS imagers (AMIs) have the advantage of being compatible with conventional CMOS analogue/digital circuit design. One of the major problems in AMIS is their large fixed pattern noise compared to CCD imagers. The Letter presents the structure of a nonvolatile tunnel-effect analogue memory which is fully compatible with a standard CMOS process and which can reduce significantly the offset-like fixed pattern noise in AMI arrays.<> |
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