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光电子成像:回顾和展望
引用本文:周立伟.光电子成像:回顾和展望[J].中国计量学院学报,2001,12(2):25-29.
作者姓名:周立伟
作者单位:北京理工大学光电工程系,
摘    要:本文回顾半个世纪以来光电子成像 (包括微光成像和热成像 )的进展 .在微光成像技术方面 ,叙述了一代、二代和三代像增强技术、真空和固体微光摄像技术、光子成像计数技术的现状和发展 ;在热成像技术方面 ,叙述了致冷型一代、二代和三代热成像技术和非致冷型阵列热成像的现状和发展 .文中对新世纪的微光四代像增强技术、新型微光摄像技术和热成像技术的发展作了展望 .

关 键 词:光电子成像  微光成像  热成像  像增强  微光摄像
文章编号:1004-1540(2001)02-0025-05
修稿时间:2001年5月6日

Retrospect and prospect for Photoelectronic Imaging
ZHOU Li-wei.Retrospect and prospect for Photoelectronic Imaging[J].Journal of China Jiliang University,2001,12(2):25-29.
Authors:ZHOU Li-wei
Abstract:This paper review the research on photoelectronic imag in g in the past few decades. The photoelectronic imaging mainly consists of low-l ight-level imaging and thermal imaging. In the aspect of the low-light-level imaging, the development and current status of the image intensification of firs t generation, second generation and third generation, the vacuum and solid state imaging pickup, as well as the image photon-counting have been described. In t he aspect of thermal imaging, the development and current status of the cooled t hermal imaging of first generation, matrixes have been described. The prospects for the development of low-light-level image intensification of fourth generat ion, the new low-light-level imaging pickup and the new type of thermal imagin g have also been discussed.
Keywords:photoelectronic imaging  low-light-level imaging  therm al imaging  image intensification  low-light-level imaging pickup
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