恒电流法制备Cu2O/TiO2复合纳米管阵列异质结光电极

通过在含F-离子的电解液中阳极氧化Ti薄片基底制备了TiO2纳米管阵列,随后通过恒电流沉积的方法在在TiO2纳米管阵列顶部原位电沉积了Cu2O纳米颗粒。场发射电子扫描显微镜显示TiO2纳米管这列被成功制备,通过恒电流电化学沉积后,TiO2纳米管阵列顶部出现大量纳米颗粒物质,并且随着沉积时间的延长,可以控制沉积物的量。通过X-射线衍射谱的特征衍射谱图我们可以发现TiO2锐钛矿的衍射峰以及相对较弱的Cu2O衍射峰,这说明Cu2O晶体的结晶度不高。在能谱（EDS）图中我们可以发现Ti、Cu、O三种元素,结合XRD以及FE-SEM结果我们可以指出,通过恒电流法确实可以在TiO2纳米管阵列顶部原位沉积Cu2O纳米颗粒。

Fabrication Cu2O/TiO2 Composition Nanotube Array Heterojunction Photo-electrode by Galvanostatic Method

A series of Cu2O/TiO2 composite nanotube array p-n heterojunction photo-electrodes were prepared by electrochemical anode oxidation Ti substrate in F-ions contained electrolyte,subsequently the as-prepared TiO2 nanotube array was electro-deposited in a copper lactate complex electrolyte with different times.The field-emission scanning electron microscopy show that the TiO2 nanotube array was prepared successfully,and some other nanoparticles can deposition on the top surface of the TiO2 nanotube array,meanwhile,the mass of nanoparticles can adjustment by varying electrodeposition time.In the X-ray diffraction(XRD) peak patterns,we can find out the characteristic peaks of TiO2 and Cu2O crystals.However the characteristic diffusion intensity of Cu2O is very weaker than TiO2,it is indicate that the crystallinity of the as-deposition Cu2O semiconductor is not high enough.In the Energy Dispersive Spectrometer(EDS),we can figure out the elements of Ti,Cu,O.Combine with the XRD and FE-SEM results,at last,we can point out that the Cu2O was deposited on the top of TiO2 nanotube array successfully by galvanostatic method.