Silicon Nitride Films Deposited by RF Sputtering for Microstructure Fabrication in MEMS |
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Authors: | Vivekanand Bhatt and Sudhir Chandra |
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Affiliation: | (1) Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, Hauz-Khas, New Delhi, 110016, India |
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Abstract: | In the present work, we report silicon nitride films deposited by a radio- frequency (RF) sputtering process at relatively
low temperatures (<260°C) for microelectromechanical system (MEMS) applications. The films were prepared by RF diode sputtering
using a 3-inch-diameter Si3N4 target in an argon ambient at 5 mTorr to 20 mTorr pressure and an RF power of 100 W to 300 W. The influence of the film deposition
parameters, such as RF power and sputtering pressure, on deposition rate, Si-N bonding, surface roughness, etch rate, and
stress in the films was investigated. The films were deposited on single/double-side polished silicon wafers and transparent
fused-quartz substrates. To explore the RF-sputtered silicon nitride film as a structural material in MEMS, microcantilever
beams of silicon nitride were fabricated by bulk, surface, and surface-bulk micromachining technology. An RF-sputtered phosphosilicate
glass film was used as a sacrificial layer with RF-sputtered silicon nitride. Other applications of sputtered silicon nitride
films, such as in the local oxidation of silicon (LOCOS) process, were also investigated. |
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Keywords: | RF sputtering silicon nitride structural material surface micromachining MEMS |
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