Comparison of spatial compositional uniformity and dislocation density for organometallic vapor phase epitaxial Hg1−x CdxTe grown by the direct alloy and interdiffused growth processes

Etch pit density and spatial compositional uniformity data are presented for organometallic vapor phase epitaxial Hg_1−x Cd_x Te grown by the direct alloy and interdiffused growth methods. For alloy growth, composition variation is as low as Δx=0.004 and 0.02 over 2- and 3-in diam areas, respectively; while for growth on CdZnTe substrates, etch pit density values lower than 2×10⁵ cm⁻² have been achieved. For interdiffused growth on CdZnTe, etch pit density values lower than 5×10⁵ cm⁻² have been obtained, while the composition variation is usually Δx≤0.004 and 0.014 over 2- and 3-in diam areas, respectively. Data demonstrate that the choice of particular CdZnTe substrate strongly affects the subsequent etch pit density measured in the layer. Reasonably uniform n-type doping over 3-in diam area using the source triethylgallium is also reported for both growth methods.