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Reprocessing of thermally oxidized aluminum arsenide (AlAs) in epitaxial multilayers without delamination |
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| Authors: | L Hobbs I Eddie G Erwin A C Bryce R M De La Rue J S Roberts T F Krauss D W Mccomb M Mackenzie |
| Affiliation: | (1) Department of Electronics and Electrical Engineering, University of Glasgow, G12 8QQ Glasgow, United Kingdom;(2) Centre for III–V Materials, University of Sheffield, S1O 2TN Sheffield, United Kingdom;(3) Department of Physics, University of St. Andrew, KY16 9AJ St Andrews, United Kingdom;(4) Department of Materials, Imperial College London, SW7 2AZ London, United Kingdom;(5) Kelvin Nanocharacterisation Centre, Department of Physics and Astronomy, University of Glasgow, UK |
| Abstract: | Annealing or processing of AlAs that has been subjected to a wet thermal oxidation process can result in severe delamination of material at the oxidation front. This paper reports a procedure for preventing this delamination and presents a possible cause for the delamination. |
| Keywords: | AlAs thermal oxidation delamination |
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