| 微波GaAs金属－半导体场效应管可靠性研究的进展 |
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| 引用本文： | 袁泽亮. 微波GaAs金属－半导体场效应管可靠性研究的进展[J]. 真空与低温, 1995, 0(2) |
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| 作者姓名： | 袁泽亮 |
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| 作者单位： | 兰州物理研究所 |
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| 摘 要： | 综述了近年来微波ＧａＡｓＭＥＳＦＥＴ可靠性的研究进展。重点介绍了影响其可靠性的因素如栅肖特基结和源／漏欧姆结的相互扩散及表面效应等。
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| 关 键 词： | 微波GaAs金属－半导体场效应管（MESFET），可靠性，电迁移、栅肖特基结，源／漏欧姆结。 |
PROGRESS OF MICROWAVE GaAS MESFET RELIABILITY |
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| Yuan Zelizhg. PROGRESS OF MICROWAVE GaAS MESFET RELIABILITY[J]. Vacuum and Cryogenics, 1995, 0(2) |
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| Authors: | Yuan Zelizhg |
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| Abstract: | The development of microwave GaAs MESFET reliability is described.Some factors influencing on its reliability are emphasized such as interdiffusion of gate Schottky contact and source/drain Ohmic contact and surface effect. |
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| Keywords: | Microwave GaAs metal-semiconductorfield efect transistor(MESFET). Reliability Electromigration Gate Schottky contact Source/drain Ohmic contact. |
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