| 双向负阻晶体管动态伏安特性的实验研究 |
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| 引用本文： | 周旋,高广和.双向负阻晶体管动态伏安特性的实验研究[J].电子与信息学报,1991,13(3):327-331. |
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| 作者姓名： | 周旋 高广和 |
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| 作者单位： | 中国科学院半导体研究所 北京
(周旋)，华北电力学院研究生院 北京(高广和) |
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| 摘 要： | 本文研究了双向负阻晶体管(Bidirectional Negative Resistance Transistor,简称BNRT)在张弛振荡电路中的动态伏安特性。借助动态伏安特性对BNRT张弛振荡电路的一些性质进行了分析。实验结果与计算结果一致。本文还对改进器件结构的设计,以便使器件达到更高的振荡频率提供了理论依据。
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| 关 键 词： | 半导体器件 负阻器件 张弛振荡器 |
| 收稿时间： | 1989-7-29 |
| 修稿时间： | 1990-5-16 |
STUDY ON THE DYNAMIC I-V CHARACTERISTICS OF BNRT |
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| Zhou Xuan,Gao Guanghe.STUDY ON THE DYNAMIC I-V CHARACTERISTICS OF BNRT[J].Journal of Electronics & Information Technology,1991,13(3):327-331. |
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| Authors: | Zhou Xuan Gao Guanghe |
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| Affiliation: | Institute of Semiconductors Academia Sinica Beijing;Beijing Graduate School of North China Institute of Electric Power Beijing |
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| Abstract: | Experimental investigation was carried out for the dynamic I-V characteris-tics of the bidirectional negative resistance transistor (BNRT) in the relaxation oscillation circuit. Some properties of the BNRT relaxation oscillation circuit were also analysed by means of the dynamic I-V characteristics. Experimental results agree with the computations. The direction for improving the device design is also pointed out in order to enhance the oscillation frequency. |
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| Keywords: | Semiconductor devices Negative resistance device Relaxation oscillator |
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