High-current-gain submicrometer InGaAs/InP heterostructure bipolartransistors |
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| Authors: | Nottenburg R.N. Chen Y.-K. Panish M.B. Hamm R. Humphrey D.A. |
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| Affiliation: | AT&T Bell Lab., Murray Hill, NJ; |
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| Abstract: | Common-emitter current gains of 115 and 170 are achieved in transistors with emitter dimensions as small as 0.3×3 and 0.8×3 μm2, respectively. These results are comparable with scaling experiments reported for Si bipolar devices and represent a significant improvement over AlGaAs/GaAs heterostructure bipolar transistors. Both the low surface recombination velocity and nonequilibrium carrier transport in the thin (800-Å) InGaAs base enhance the DC performance of these transistors |
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