影响PSM工艺产品良率因素的研究

文章围绕实际工作中遇到的0.13μm Logic产品的良率问题展开。主要通过分析比较相位移掩膜工艺和传统铬膜工艺的优缺点，找出可能导致产品良率低的主要因素。最后集中分析光阻膜厚与关键尺寸大小的关系图。当关键尺寸小到0.13μm以下时，前层图形的影响对光阻膜厚的选择至关重要，进而对良率也有相应的影响。通过针对光阻膜厚的选择建立理论模型，并设计相关实验进行验证，最后得到结论。在研究过程中会用到一些与光刻相关的先进机器设备和软件。硬件方面包括光阻涂布和显影机、扫描式曝光机、关键尺寸量测机、显影后检查硅片表面宏观缺陷的机器、检查硅片表面微观缺陷的机器等等，软件方面包括设计尺寸的检查软件、光学邻近效应修正软件等。

The Relationship Between Resist and Pre-layer Pattern Research for the Effect of Yield in PSM Process

This paper mainly solve the low yield issue in 0.13μm logic process.Compare the PSM (Phase Shift Mask) process with the BIN (Binary) process to analyze their advantage and disadvantage, respectively.Finally we focus the low yield issue on photo resist’s thickness.From the photo resist’s swing curve, the theoretic model to anlyze the important of resist thickness’s selection is set up based on pre-layer pattern’s topography. When the CD (Critical Dimension) is smaller than 0.13μm,the non-optimized photo resist’s thickness will impact the yield. Finally, the related test to comfirm the feasibility of the optimized thickness is prepared.In this research, some advanced equipment and software are used, such as track, scanner, CD-SEM, ADI (After Devel- oper Inspection), KLA defect checking, DRC (Design Rule Check), OPC (Optical Proximity Correction), ect.