首页 | 本学科首页   官方微博 | 高级检索  
     

NITE工艺制备SiCf/SiC复合材料的研究进展
引用本文:高晔,焦健.NITE工艺制备SiCf/SiC复合材料的研究进展[J].材料工程,2019,47(8):33-39.
作者姓名:高晔  焦健
作者单位:中国航发北京航空材料研究院先进复合材料国防科技重点实验室 ,北京,100095;中国航发北京航空材料研究院先进复合材料国防科技重点实验室 ,北京,100095
摘    要:NITE(nano-infiltration and transient eutectic)工艺作为一种制备碳化硅纤维增强碳化硅基(SiCf/SiC)复合材料的新方法,具备周期短、工艺简单、生产成本低等优点,制备出的复合材料基体致密、孔隙率低、不含残余硅,适用于1400℃及以上高温长时服役环境应用。目前,日本、美国等国家基于其成熟的第三代碳化硅纤维,对该技术开展了较为深入的研究,并在核能工业热交换器、航空发动机燃烧室衬套等领域进行了应用验证。本文针对NITE工艺从基本概念、工艺流程、制备的SiCf/SiC复合材料和构件考核验证及前景展望四方面进行综合阐述,以期为国内该工艺的发展及应用提供一定程度的参考。

关 键 词:SiCf/SiC复合材料  NITE工艺  碳化硅纤维

Research progress on NITE process for fabricating SiC_f/SiC composites
GAO Ye,JIAO Jian.Research progress on NITE process for fabricating SiC_f/SiC composites[J].Journal of Materials Engineering,2019,47(8):33-39.
Authors:GAO Ye  JIAO Jian
Affiliation:(National Key Laboratory of Advanced Composites,AECC Beijing Institute of Aeronautical Materials,Beijing 100095,China)
Abstract:Nano-infiltration and transient eutectic (NITE) process is a new method for fabricating silicon carbide fiber reinforced silicon carbide based (SiC f/SiC) composites, which has the advantages of short production cycle, simple process and low production cost. The material made by NITE process is with compact matrix, low porosity, and free of residual silicon, therefore, it is suitable for high temperature and long service environments at 1400℃ and above. At present, Japan, the United States and other countries have carried out in-depth research on this technology based on the mature third-generation silicon carbide fiber, and applied the composites in fields such as nuclear energy industrial heat exchangers and aero-engine combustor liners. In this paper, the basic concepts, the manufacturing process, the mechanical properties of SiC f/SiC composites and component verification and prospects of NITE process were reviewed, in order to provide the reference to a certain degree for the domestic development of this process.
Keywords:SiCf/SiC composite  NITE progress  silicon carbide fiber
本文献已被 维普 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号