Physical and Dielectric Properties of (1–x)PbZrO3·xBaTiO3 Thin Films Prepared by Chemical Solution Deposition |
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Authors: | Jeong Hwan Park Ki Hyun Yoon Dong Heon Kang |
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Affiliation: | Department of Ceramic Engineering, Yonsei University, Seoul 120–749, Korea |
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Abstract: | Physical and dielectric properties of (1– x )PbZrO3· x BaTiO3 thin films prepared by a chemical coating process have been investigated as a function of BaTiO3 ( x ) content (0≤ x ≤0.2). Changing the molar ratio between propylene glycol and water prior to the deposition optimized the chemical precursors. (1– x )PbZrO3- x BaTiO3 thin films that contained a majority of perovskite phase, but also contained large amounts of other phases, were fabricated. These films could withstand fields of 250 kV/cm at 1 kHz. The microstructure of the thin films was found to depend on the BaTiO3 content. The phase transition from antiferroelectric to ferroelectric was gradually induced as the BaTiO3 content increased. A maximum dielectric constant of ~809 was obtained at the composition of x = 0.1. A maximum dielectric constant of ~809 was obtained at the composition of x = 0.1. A thin film at the low-field antiferroelectric-ferroelectric phase boundary with x = 0.05 exhibited the highest P sat and P r values. The maximum values of these were 45 and 31 μC/cm2, respectively. |
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