A groove GaInAsP laser on semi-insulating InP using a laterally diffused junction |
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| Authors: | Yu K Koren U Chen T Yariv A |
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| Affiliation: | California Institute of Technology, Pasadena, CA, USA; |
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| Abstract: | Low threshold current GaInAsP/InP groove lasers have been fabricated on semi-insulating InP substrates. Three n-type layers are grown with a single liquid phase epitaxial (LPE) growth process, and the p-n junction is formed by a lateral Zn diffusion. The active layer inside the groove provides a real index waveguide. Threshold currents as low as 14 mA with 300 μm cavity length are obtained. A single longitudinal mode at 1.3 μm up to1.4 I_{TH}is observed. The lasers operate with a single lateral mode when the active region width is less than 2.5 μm. This laser is suitable for monolithic integration with other optoelectronic devices. |
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