Buried-channel GaAs MESFET's with frequency-independent output conductance

The output conductance of GaAs MESFET's is shown to be a function of frequency and to have a well-defined temperature dependence. This behavior is in agreement with other reports of the behavior of GaAs ion-implanted MESFET's. The output conductance of buried-channel GaAs MESFET's is shown to be independent of frequency and temperature. This is an important improvement in the output characteristics with many implications for GaAs analog and digital circuits.