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High-isolation W-band MEMS switches
Authors:Rizk  J Guan-Leng Tan Muldavin  JB Rebeiz  GM
Affiliation:Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI;
Abstract:This paper presents the design, fabrication and measurement of single, T-match and π-match W-band high-isolation MEMS shunt switches on silicon substrates. The single and T-match design result in -20 dB isolation over the 80-110 GHz range with an insertion loss of 0.25±0.1 dB. The π-match design results in a reflection coefficient lower than -20 dB up to 100 GHz, and an isolation of -30 to -40 dB from 75 to 110 GHz (limited by leakage through the substrate). The associated insertion loss Is 0.4±0.1 dB at 90 GHz. To our knowledge, this is the first demonstration of high-performance MEMS switches at W-band frequencies
Keywords:
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